Publications in Journals
1. Gas sensing based on inelastic electron tunneling spectroscopy, V. Bommisetty et. al., IEEE Sensors (communicated)
2. Development of gas sensors based on tunneling spectroscopy, S. Bhandari, R. Behanan, Qi Wang, V. Bommisetty, R. Mileham1, and D. W. Galipeau., Sensors and Actuators (communicated)
3. Coverage and nearest-neighbor dependence of adsorbate diffusion, K L. Wong, Bommisetty V. Rao, Greg Pawin, Erick Ulin-Avila, and Ludwig Bartels, J. Chem. Phys. 123, 201102 (2005)
4.
Measurement of Linear Free Energy Relationship one
Molecule at a Time, Rao, B.V., Ki-Young Kwon, Liu,
A., Bartels, L., Proceedings of
5. Halogen-substituted thiophenol molecules on Cu(111), Wong KL, Lin X, Kwon KY, Pawin G, Rao BV, Liu A, Bartels L, Stolbov S, Rahman TS., Langmuir 20, 10928 (2004)
6. The Effect of Halo-Substitution on the Geometry of Arenethiol Films on Cu(111), Wong K., Kwon K.Y., Rao B.V., Liu A., Bartels L., J Am Chem Soc 126, 7762 (2004)
7. Low-Temperature Mobility and Structure Formation of a Pro-Chiral Aromatic Thiol (2,5-dichlorothiophenol) on Cu(111), Rao B.V., Kwon K.Y., Liu A.W., Bartels L., Langmuir 20, 4406(2004)
8. Translation and rotation of a haloaromatic thiol, Bartels L., Rao B.V., Liu, A., Chem Phys. Lett. 385, 36 (2004)
9. 2,5-dichlorothiophenol on Cu-(111): Initial adsorption site and scanning tunnel microscope-based abstraction of hydrogen at high intramolecular selectivity, Rao B.V., Kwon K.Y., Liu A.W., Bartels L., J. Chem. Phys. 119, 10879 (2003 )
10. Atomic structure and formation process of the Si (111)-Sb(Ö7 xÖ 7) surface phase, Gruznev D., Rao B.V., Furukawa Y., Tambo T., Tatsuyama C., Appl. Surf. Sci. 212, 135 (2003 )
11. Surface structure evolution during Sb adsorption on Si(111)-In(4 x 1) reconstruction, Gruznev D.V., Rao B.V., Tambo T., Tatsuyama C., Appl. Surf. Sci. 190, 134 (2002)
12. Twinned InSb molecular layer on Si(111) substrate, Rao B.V., Gruznev D., Mori M., Tambo T., Tatsuyama C., Surf. Sci. 493, 373 (2001)
13. How Si(001)-4 x 3-In reconstruction improves the epitaxial quality of InSb films grown on Si(001) substrates, Rao B.V., Atoji M., Li D.M., Tambo T., Tatsuyama C., Surf. Sci., 493, 405 (2001)
14. Structural transformations during Sb adsorption on Si(111)-In(4 x 1) reconstruction, Rao B.V., Gruznev D.V., Tambo T., Tatsuyama C., Jpn. J Appl. Phys. 40B, 4304 (2001)
15. Sb adsorption on Si(111)-In(4 x 1) surface phase, Rao B.V., Gruznev D., Tambo T., Tatsuyama C., Appl. Surf. Sci. 175, 187 (2001)
16. Growth of high-quality InSb films on Si(111) substrates without buffer layers, Rao B.V., Gruznev D., Tambo T., Tatsuyama C., J. Cryst. Growth 224, 316 (2001)
17. Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth method, Rao B.V., Gruznev D., Tambo T., Tatsuyama C., Semicon. Sci Tech. 16, 216 (2001)
18. Effect of In(4 x 1) reconstruction induced interface modification on the growth behavior of InSb on Si(111) substrate, Rao B.V., Gruznev D., Tambo T., Tatsuyama C., Jpn. J Appl. Phys. 39A, 3935 (2000)
19. Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate, Rao B.V., Okamoto T, Shinmura A., Tambo T., Tatsuyama C., Appl. Surf. Sci. 162, 263 (2000)
20. Growth temperature effect on the heteroepitaxy of InSb on Si(111), Rao B.V., Okamoto T, Shinmura A., Tambo T., Tatsuyama C., Appl. Surf. Sci 159,335 (2000)
21. Growth-temperature-dependent role of In(4x1) surface phase for the heteroepitaxy of InSb on Si(111), Rao B.V., Gruznev D., Tambo T., Tatsuyama C., J Appl. Phys 87, 724 (2000)
22. In(4 x 3) reconstruction mediated heteroepitaxial growth of InSb on Si(001) substrate, Rao B.V., Atoji M., Li D.M., Tambo T., Tatsuyama C., Jpn. J Appl. Phys. 37A, L1297 (1998)
23. Plastic flow in Metglass 2204 under swift heavy ion irradiation, Rao B.V., Agrawal H.M., Kushwaha R.P.S., Kanjilal D., Sharma S.K., Nucl. Inst. Methods B, 129, 487 (1997)
24. Parity dependence of the nuclear-level density at high-excitation, Rao, B.V, Agrawal, H.M, Nuclear Phys. A 592, 1(1995)